Invention Grant
- Patent Title: Implementing the post-porosity plasma protection (P4) process using I-CVD
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Application No.: US16428159Application Date: 2019-05-31
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Publication No.: US11371143B2Publication Date: 2022-06-28
- Inventor: Krystelle Lionti , Geraud Jean-Michel Dubois , Willi Volksen , Jacques Faguet
- Applicant: International Business Machines Corporation , Tokyo Electron Limited
- Applicant Address: US NY Armonk; JP Tokyo
- Assignee: International Business Machines Corporation,Tokyo Electron Limited
- Current Assignee: International Business Machines Corporation,Tokyo Electron Limited
- Current Assignee Address: US NY Armonk; JP Tokyo
- Agency: CanaanLaw, P.C.
- Agent Karen Canaan
- Main IPC: C23C16/455
- IPC: C23C16/455 ; B05D1/00

Abstract:
Provided is a pore-filling method for protecting the pores of a porous material. The method, which is performed using a modified i-CVD technique, involves filling the pores of a porous material with a gas phase monomer within a pressure chamber and subsequently polymerizing the monomer, both within the pores and on the surface of the material as an overburden. The method is solvent-free and can fill and protect pores of any size of any material.
Public/Granted literature
- US20200378001A1 IMPLEMENTING THE POST-POROSITY PLASMA PROTECTION (P4) PROCESS USING I-CVD Public/Granted day:2020-12-03
Information query
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