Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing the same
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Application No.: US16888929Application Date: 2020-06-01
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Publication No.: US11373902B2Publication Date: 2022-06-28
- Inventor: Hung-Chang Sun , Po-Chin Chang , Akira Mineji , Zi-Wei Fang , Pinyen Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/8234 ; H01L23/532 ; H01L23/535 ; H01L27/088

Abstract:
A semiconductor structure includes a semiconductor substrate, a gate structure, an etch stop layer, a dielectric structure, and a conductive material. The gate structure is on the semiconductor substrate. The etch stop layer is over the gate structure. The dielectric structure is over the etch stop layer, in which the dielectric structure has a ratio of silicon to nitrogen varying from a middle layer of the dielectric structure to a bottom layer of the dielectric structure. The conductive material extends through the dielectric structure.
Public/Granted literature
- US20200294851A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2020-09-17
Information query
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