Invention Grant
- Patent Title: Semiconductor packages including through holes and methods of fabricating the same
-
Application No.: US16750579Application Date: 2020-01-23
-
Publication No.: US11373932B2Publication Date: 2022-06-28
- Inventor: Hyoukyung Cho , Daesuk Lee , Jinnam Kim , Taeseong Kim , Kwangjin Moon , Hakseung Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2019-0081342 20190705
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L25/065 ; H01L23/532 ; H01L21/768 ; H01L21/02 ; H01L21/306 ; H01L23/528 ; H01L21/027 ; H01L21/288 ; H01L21/321

Abstract:
Disclosed are semiconductor packages and methods of fabricating the same. The semiconductor package comprises a first wiring layer, a first semiconductor substrate on the first wiring layer, a first dielectric layer on the first semiconductor substrate, a landing pad in the first wiring layer, a through hole that penetrates the first semiconductor substrate, the first dielectric layer, and the first wiring layer and exposes the landing pad, the through hole including a first hole and a second hole on a bottom end of the first hole, the second hole having a maximum diameter less than a minimum diameter of the first hole, and a mask layer on an upper lateral surface of the through hole.
Public/Granted literature
- US20210005533A1 SEMICONDUCTOR PACKAGES INCLUDING THROUGH HOLES AND METHODS OF FABRICATING THE SAME Public/Granted day:2021-01-07
Information query
IPC分类: