Invention Grant
- Patent Title: Channelized filter using semiconductor fabrication
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Application No.: US16916644Application Date: 2020-07-17
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Publication No.: US11373965B2Publication Date: 2022-06-28
- Inventor: Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
- Applicant: Northrop Grumman Systems Corporation
- Applicant Address: US VA Falls Church
- Assignee: Northrop Grumman Systems Corporation
- Current Assignee: Northrop Grumman Systems Corporation
- Current Assignee Address: US VA Falls Church
- Agency: McCracken & Gillen LLC
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01P1/203

Abstract:
An exemplary semiconductor technology implemented channelized filter includes a dielectric substrate with semiconductor fabricated metal traces on one surface, and input and output ports. A signal trace connected between the input and output port carries the signal to be filtered. Filter traces connect at intervals along the length of the signal trace to provide a reactance that varies with frequency. Ground traces provide a reference ground. A silicon enclosure with semiconductor fabricated cavities has a metal layer deposited over it. The periphery of the enclosure is dimensioned to engage corresponding ground traces about the periphery of the substrate. Walls of separate cavities enclose each of the filter traces to individually surround each thereby providing electromagnetic field isolation. Metal-to-metal conductive bonds are formed between cavity walls that engage the ground traces to establish a common reference ground. The filter traces preferably meander to minimize the footprint area of the substrate.
Public/Granted literature
- US20220020708A1 CHANNELIZED FILTER USING SEMICONDUCTOR FABRICATION Public/Granted day:2022-01-20
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