- 专利标题： Fan-out package with cavity substrate
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申请号： US17068026申请日： 2020-10-12
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公开(公告)号： US11380666B2公开(公告)日： 2022-07-05
- 发明人: Po-Hao Tsai , Techi Wong , Po-Yao Chuang , Shin-Puu Jeng , Meng-Wei Chou , Meng-Liang Lin
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L23/31
- IPC分类号： H01L23/31 ; H01L21/56 ; H01L25/18 ; H01L23/00
摘要：
Structures and methods of forming fan-out packages are provided. The packages described herein may include a cavity substrate, one or more semiconductor devices located in a cavity of the cavity substrate, and one or more redistribution structures. Embodiments include a cavity preformed in a cavity substrate. Various devices, such as integrated circuit dies, packages, or the like, may be placed in the cavity. Redistribution structures may also be formed.
公开/授权文献
- US20210035966A1 Fan-Out Package with Cavity Substrate 公开/授权日：2021-02-04
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