Invention Grant
- Patent Title: Integrated circuit
-
Application No.: US16807003Application Date: 2020-03-02
-
Publication No.: US11380671B2Publication Date: 2022-07-05
- Inventor: Ya-Qi Ma , Lei Pan , Zhen Tang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , TSMC CHINA COMPANY LIMITED
- Applicant Address: TW Hsinchu; CN Shanghai
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,TSMC CHINA COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,TSMC CHINA COMPANY LIMITED
- Current Assignee Address: TW Hsinchu; CN Shanghai
- Agency: Maschoff Brennan
- Priority: CN202010078071.9 20200202
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/06

Abstract:
An integrated circuit includes a pull-up circuit, an electrostatic discharge (ESD) primary circuit, and a pull-down circuit. The pull-up circuit is coupled between a pad and a first voltage terminal. The ESD primary circuit includes a first terminal which is coupled to the pad and the pull-up circuit, and a second terminal coupled to a second voltage terminal different from the first voltage terminal. The pull-down circuit has a first terminal which is coupled to the pad, the ESD primary circuit and the pull-up circuit, and a second terminal coupled to the second voltage terminal. The pull-down circuit includes at least one first transistor of a first conductivity type having a first terminal coupled to the first terminal of the pull-down circuit. A breakdown voltage of the at least one first transistor is greater than a trigger voltage of the ESD primary circuit.
Public/Granted literature
- US20210242194A1 INTEGRATED CIRCUIT Public/Granted day:2021-08-05
Information query
IPC分类: