- 专利标题： GaAs1-xSbx nanowires on a graphitic substrate
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申请号： US17038175申请日： 2020-09-30
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公开(公告)号： US11384286B2公开(公告)日： 2022-07-12
- 发明人: Shanthi Iyer , Surya Ratna Kiran Nalamati , Jia Li
- 申请人： North Carolina A&T State University
- 申请人地址： US NC Greensboro
- 专利权人： North Carolina A&T State University
- 当前专利权人： North Carolina A&T State University
- 当前专利权人地址： US NC Greensboro
- 代理机构： Fox Rothschild LLP
- 主分类号： C09K11/62
- IPC分类号： C09K11/62 ; C09K11/75 ; C01B32/188 ; C30B29/42 ; C30B25/16 ; C30B29/60 ; C30B29/40 ; C09K11/74 ; B82Y40/00 ; B82Y20/00
摘要：
The presently disclosed subject matter relates generally to GaAs1−xSbx nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.
公开/授权文献
- US20210095199A1 GaAs1-xSbx NANOWIRES ON A GRAPHITIC SUBSTRATE 公开/授权日：2021-04-01
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