Invention Grant
- Patent Title: Adaptive parity techniques for a memory device
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Application No.: US16993959Application Date: 2020-08-14
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Publication No.: US11385961B2Publication Date: 2022-07-12
- Inventor: Justin Eno , William A. Melton , Sean S. Eilert
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/10 ; G06F11/30 ; G06F11/07

Abstract:
Methods, systems, and devices for adaptive parity techniques for a memory device are described. An apparatus, such as a memory device, may use one or more error correction code (ECC) schemes, an error cache, or both to support access operations. The memory device may receive a command from a host device to read or write data. If the error cache includes an entry for the data, the memory device may read or write the data using a first ECC scheme. If the error cache does not include an entry for the data, the memory device may read or write the data without using an ECC scheme or using a second ECC scheme different than the first ECC scheme.
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