- 专利标题: Plasma processing apparatus
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申请号: US16581886申请日: 2019-09-25
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公开(公告)号: US11387082B2公开(公告)日: 2022-07-12
- 发明人: Hidehito Azumano
- 申请人: Shibaura Mechatronics Corporation
- 申请人地址: JP Yokohama
- 专利权人: Shibaura Mechatronics Corporation
- 当前专利权人: Shibaura Mechatronics Corporation
- 当前专利权人地址: JP Yokohama
- 代理机构: Pearne & Gordon LLP
- 优先权: JPJP2018-183333 20180928
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H01B1/02
摘要:
According to one embodiment, a plasma processing apparatus includes a chamber being possible to maintain an atmosphere more depressurized than atmospheric pressure, a plasma generator generating a plasma inside the chamber, a gas supplier supplying a gas into the chamber, a placement part positioned below a plasma generation region and placing a processed product thereon, a depressurization part depressurizing the chamber, and a power supply electrically connected to an electrode provided on the placement part via a bus bar. The bus bar is formed of an alloy of copper and gold. Gold is more included than copper on a surface side of the bus bar. The bus bar includes a first layer formed of copper and a second layer covering the first layer and formed of an alloy of copper and gold. Gold is more included than copper on a surface side of the second layer.
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