Implementations of a method of singulating a plurality of semiconductor die may include forming an opening in a layer of passivation material coupled to a second side of a semiconductor substrate; etching substantially through a thickness of the semiconductor substrate at the opening in the layer of passivation material to form etched sidewalls along the thickness at a plurality of die streets; and jet ablating one or more portions of the layer of passivation material that overhangs the etched sidewalls.