- Patent Title: Optical sensor with trench etched through dielectric over silicon
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Application No.: US16716652Application Date: 2019-12-17
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Publication No.: US11387271B2Publication Date: 2022-07-12
- Inventor: Scott Robert Summerfelt , Hassan Omar Ali , Benjamin Stassen Cook
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Michael A. Davis, Jr.; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
In described examples an integrated circuit (IC) has multiple layers of dielectric material overlying at least a portion of a surface of a substrate. A trench is etched through the layers of dielectric material to expose a portion the substrate to form a trench floor, the trench being surrounded by a trench wall formed by the layers of dielectric material. A metal perimeter band surrounds the trench adjacent the trench wall, the perimeter band being embedded in one of the layers of the dielectric material.
Public/Granted literature
- US20210183915A1 Optical Sensor with Trench Etched Through Dielectric Over Silicon Public/Granted day:2021-06-17
Information query
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