- 专利标题： Magnetoresistive random access memory and method of manufacturing the same
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申请号： US17131767申请日： 2020-12-23
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公开(公告)号： US11387408B2公开(公告)日： 2022-07-12
- 发明人: Hui-Lin Wang , Chen-Yi Weng , Chin-Yang Hsieh , Yi-Hui Lee , Ying-Cheng Liu , Yi-An Shih , Jing-Yin Jhang , I-Ming Tseng , Yu-Ping Wang , Chien-Ting Lin , Kun-Chen Ho , Yi-Syun Chou , Chang-Min Li , Yi-Wei Tseng , Yu-Tsung Lai , Jun Xie
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权： CN201910634906.1 20190715
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L43/02 ; H01L43/12 ; H01L27/22
摘要：
A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.
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