Invention Grant
- Patent Title: Integrated circuit and method of manufacturing same
-
Application No.: US17140368Application Date: 2021-01-04
-
Publication No.: US11409938B2Publication Date: 2022-08-09
- Inventor: Ting-Wei Chiang , Hui-Zhong Zhuang , Li-Chun Tien
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F30/392
- IPC: G06F30/392 ; H01L27/02 ; H01L27/092

Abstract:
An integrated circuit includes a first and a second set of conductive traces. The first set of conductive traces is in a first level and extends in a first direction. The second set of conductive traces is in a second level and extends in a second direction. The second set of conductive traces includes a first conductive trace corresponding to a gate terminal of a first p-type transistor and a gate terminal of a first n-type transistor, and a second conductive trace corresponding to a gate terminal of a second n-type transistor and a gate terminal of a second p-type transistor. The first and second conductive trace are separated from each other in the first direction. The first n-type transistor and the second p-type transistor are part of a first transmission gate. The second n-type transistor and the first p-type transistor are part of a second transmission gate.
Public/Granted literature
- US20210124866A1 INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING SAME Public/Granted day:2021-04-29
Information query