- 专利标题： Methods for selective deposition of tungsten atop a dielectric layer for bottom up gapfill
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申请号： US16845749申请日： 2020-04-10
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公开(公告)号： US11417568B2公开(公告)日： 2022-08-16
- 发明人: Wei Lei , Yi Xu , Yu Lei , Tae Hong Ha , Raymond Hung , Shirish A. Pethe
- 申请人： APPLIED MATERIALS, INC.
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Moser Taboada
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/3213 ; H01L21/285
摘要：
Methods and apparatus for selectively depositing a tungsten layer atop a dielectric surface. In embodiments the method includes: depositing a tungsten layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a dielectric bottom surface of a feature disposed in a substrate to form a first tungsten portion having a first thickness atop the substrate field, a second tungsten portion having a second thickness atop the sidewall, and a third tungsten portion having a third thickness atop the dielectric bottom surface, wherein the second thickness is less than the first thickness and third thickness; oxidizing a top surface of the tungsten layer to form a first oxidized tungsten portion atop the substrate field, a second oxidized tungsten portion atop the side wall, and a third oxidized tungsten portion atop the dielectric bottom surface; removing the first oxidized tungsten portion, the second oxidized tungsten portion and the third oxidized tungsten portion, wherein the second tungsten portion is completely removed from the sidewall; and passivating or completely removing the first tungsten portion from the substrate field.
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