- 专利标题： Semiconductor device and manufacturing method thereof
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申请号： US16787952申请日： 2020-02-11
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公开(公告)号： US11424255B2公开(公告)日： 2022-08-23
- 发明人: Ming-Chyi Liu , Chih-Ren Hsieh , Sheng-Chieh Chen
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Maschoff Brennan
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L27/11521 ; H01L21/28 ; H01L21/762 ; H01L21/311 ; H01L29/423 ; H01L21/3213 ; H01L21/3105 ; H01L29/788
摘要：
A semiconductor device includes a substrate, an isolation feature, a floating gate, and a control gate. The substrate has a protruding portion. The isolation feature surrounds the protruding portion of the substrate. The floating gate is over the protruding portion of the substrate, in which a sidewall of the floating gate is aligned with a sidewall of the protruding portion of the substrate. The control gate is over the floating gate.
公开/授权文献
- US20210249429A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2021-08-12
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