- 专利标题： In-situ formation of metal gate modulators
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申请号： US16877708申请日： 2020-05-19
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公开(公告)号： US11430698B2公开(公告)日： 2022-08-30
- 发明人: Hsin-Han Tsai , Chung-Chiang Wu , Cheng-Lung Hung , Weng Chang , Chi On Chui
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/28 ; H01L27/088 ; H01L29/49
摘要：
A method includes forming a gate dielectric on a semiconductor region, depositing a work-function layer over the gate dielectric, depositing a silicon layer over the work-function layer, and depositing a glue layer over the silicon layer. The work-function layer, the silicon layer, and the glue layer are in-situ deposited. The method further includes depositing a filling-metal over the glue layer; and performing a planarization process, wherein remaining portions of the glue layer, the silicon layer, and the work-function layer form portions of a gate electrode.
公开/授权文献
- US20210366775A1 In-Situ Formation of Metal Gate Modulators 公开/授权日：2021-11-25
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