Invention Grant
- Patent Title: Semiconductor component comprising a deformation layer and method for producing a semiconductor component comprising a deformation layer
-
Application No.: US16615835Application Date: 2018-05-17
-
Publication No.: US11430917B2Publication Date: 2022-08-30
- Inventor: Isabel Otto , Anna Kasprzak-Zablocka , Christian Leirer , Berthold Hahn
- Applicant: Osram Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: Osram Opto Semiconductors GmbH
- Current Assignee: Osram Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Viering, Jentschura & Partner mbB
- Priority: DE102017111278.2 20170523
- International Application: PCT/EP2018/062989 WO 20180517
- International Announcement: WO2018/215309 WO 20181129
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L33/38 ; H01L33/00 ; H01L31/0216 ; H01L31/0224 ; H01L33/32

Abstract:
A semiconductor component may include a semiconductor body having a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, opposite from the first main face, the first main face being formed by a surface of the first semiconductor layer and the second main face being formed by a surface of the second semiconductor layer. At least one side face may join the first main face to the second main face, an electrically conducting carrier layer, which covers the second main face at least in certain regions and extends from the second main face to at least one side face of the semiconductor body. An electrically conducting continuous deformation layer may cover the second main face at least in certain regions. The electrically conducting deformation layer may have an elasticity that is identical to or higher than the electrically conducting carrier layer.
Public/Granted literature
- US20200168767A1 SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT Public/Granted day:2020-05-28
Information query
IPC分类: