- 专利标题： Memory cells configured to generate weighted inputs for neural networks
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申请号： US17111721申请日： 2020-12-04
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公开(公告)号： US11437103B2公开(公告)日： 2022-09-06
- 发明人: Umberto Minucci , Tommaso Vali , Fernanda Irrera , Luca De Santis
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Brooks, Cameron & Huebsch, PLLC
- 主分类号： G06F3/06
- IPC分类号： G06F3/06 ; G11C16/04 ; G06N3/063
摘要：
A method can include applying a first voltage to a first memory cell to activate the first memory cell, applying a second voltage to a second memory cell coupled in series with the first memory cell to activate the second memory cell so that current flows through the first and second memory cells, and generating an output responsive to the current. The first voltage and a threshold voltage of the second memory cell can be such that the current is proportional to a product of the first voltage and the threshold voltage of the second memory cell.