- Patent Title: Apparatus and methods for selectively etching silicon oxide films
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Application No.: US17221944Application Date: 2021-04-05
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Publication No.: US11437241B2Publication Date: 2022-09-06
- Inventor: Fei Wang , Woo Jung Shin
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/3065

Abstract:
An apparatus and methods for selectively etching a particular layer are disclosed. The apparatus and methods are directed towards maintaining the etch rate of the particular layer, while keeping intact a non-etched layer. A gas mixture may be flowed onto the substrate in separate loops having an oxide layer and an oxynitride layer as an etch layer and a nitride layer as a non-etched layer, for example. A reaction between the resulting gas mixture and the particular layer takes place, resulting in etching of the oxide layer and the oxynitride layer while maintaining the nitride layer in the above example.
Public/Granted literature
- US20210320010A1 APPARATUS AND METHODS FOR SELECTIVELY ETCHING SILICON OXIDE FILMS Public/Granted day:2021-10-14
Information query
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