Invention Grant
- Patent Title: Negative level shifters and nonvolatile memory devices including the same
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Application No.: US17220368Application Date: 2021-04-01
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Publication No.: US11443810B2Publication Date: 2022-09-13
- Inventor: Sooyeol Yang , Hyunggon Kim , Youngsun Song
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2020-0119086 20200916
- Main IPC: G11C16/12
- IPC: G11C16/12 ; H01L27/11582 ; H01L27/11573

Abstract:
A negative level shifter includes a shifting circuit and a latch circuit. The shifting circuit shifts levels of a first input signal and a second input signal to provide a first output signal and a second output signal having complementary levels at a first output node and a second output node, respectively, using low voltage transistors and high voltage transistors having different characteristics. The latch circuit, connected to the shifting circuit at the first output node and the second output node, latches the first output signal and the second output signal, receives a negative voltage having a level smaller than a ground voltage, and drives the second output signal and the first output signal complementarily to either a level of a power supply voltage or a level of the negative voltage, based on voltage levels at the first output node and the second output node, respectively.
Public/Granted literature
- US20220084600A1 NEGATIVE LEVEL SHIFTERS AND NONVOLATILE MEMORY DEVICES INCLUDING THE SAME Public/Granted day:2022-03-17
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