- 专利标题： Semiconductor device with integrated memory devices and MOS devices and process of making the same
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申请号： US17229848申请日： 2021-04-13
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公开(公告)号： US11444095B2公开(公告)日： 2022-09-13
- 发明人: Wang Xiang , Chia-Ching Hsu , Shen-De Wang , Weichang Liu
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/66 ; H01L27/092 ; H01L27/11568 ; H01L27/11573 ; H01L21/02 ; H01L21/28 ; H01L29/49 ; H01L21/3213 ; H01L21/027 ; H01L29/78 ; H01L29/51 ; H01L21/8238 ; H01L21/311
摘要：
A semiconductor device with integrated memory devices and metal-oxide-semiconductor (MOS) devices, including a substrate with a first area and a second area, multiple double-diffused metal-oxide-semiconductor (DMOS) devices on the first area, wherein the double-diffused metal-oxide-semiconductor (DMOS) device includes a field oxide on the substrate, a first gate dielectric layer adjacent to the field oxide, and a first polysilicon gate on the field oxide and the first gate dielectric layer, and multiple memory units on the second area, wherein the memory unit includes an oxide-nitride-oxide (ONO) tri-layer and a second polysilicon gate on the oxide-nitride-oxide (ONO) tri-layer, wherein a top surface of the second polysilicon gate of the memory unit in the second area and a top surface of the first polysilicon gate of the double-diffused metal-oxide-semiconductor (DMOS) in the first area are on the same level.
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