Invention Grant
- Patent Title: Write leveling a memory device using write DLL circuitry
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Application No.: US17116634Application Date: 2020-12-09
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Publication No.: US11456031B2Publication Date: 2022-09-27
- Inventor: Liang Chen
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C11/4096
- IPC: G11C11/4096 ; G11C11/4076 ; G06F3/06

Abstract:
A host device and memory device perform internal write leveling of a data strobe with a write command. The memory device includes an input-output interface that receives the data strobe from the host device. The memory device also includes internal write circuitry configured to launch an internal write signal. The internal write circuitry includes an emulation loop configured to emulate circuitry in a clock path of a write clock generated from the clock and used to generate a feedback clock. The internal write circuitry includes a write delay lock loop configured to receive the write clock and the feedback clock to determine a number of cycles used for the loop, transmit the number of cycles to the host device to be used as a cycle adjust in an internal write leveling process, and complete the internal write leveling process with the host device using the cycle adjust.
Public/Granted literature
- US20220180918A1 WRITE LEVELING A MEMORY DEVICE USING WRITE DLL CIRCUITRY Public/Granted day:2022-06-09
Information query
IPC分类: