Embodiments of the disclosure provide an integrated circuit device and related methods. The disclosure may provide a transistor device, including: a gate structure; a drain extension region extending laterally from partially under the gate structure to a drain region; and a gate spacer located over the drain extension region. A silicide-blocking layer is over and in contact with the gate spacer. The silicide-blocking layer has a first end over the gate structure and a second, opposing end over the drain extension region. The structure also provides a conductive field plate, including a conductive layer over and in contact with the silicide-blocking layer. A field plate contact is formed on the conductive field plate.