A variable resistance memory device includes first conductive lines, second conductive lines arranged on the first conductive lines, first cell structures at intersections between the first conductive lines and the second conductive lines, each first cell structure including a switching pattern and a variable resistance pattern, first buried structures filling first trenches between the first conductive lines, and second buried structures filling second trenches between the first cell structures. Each first buried structure includes a first liner pattern covering sidewalls of a corresponding first trench, a first filling pattern being disposed on the first liner pattern and in the corresponding first trench, and a first capping pattern sealing the corresponding first trench. The second buried structures extend in the plurality of second trenches and are connected with first capping patterns of the first buried structures.