Invention Grant
- Patent Title: Protective circuit for a field-effect transistor
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Application No.: US16758145Application Date: 2017-10-23
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Publication No.: US11456588B2Publication Date: 2022-09-27
- Inventor: Roman Liebsch
- Applicant: GKN Automotive Ltd.
- Applicant Address: GB Birmingham
- Assignee: GKN Automotive Ltd.
- Current Assignee: GKN Automotive Ltd.
- Current Assignee Address: GB Birmingham
- Agency: Bejin Bieneman PLC
- International Application: PCT/EP2017/076970 WO 20171023
- International Announcement: WO2019/080989 WO 20190502
- Main IPC: H02H3/08
- IPC: H02H3/08 ; B60R16/02 ; G01R31/00 ; G01R31/327 ; H02H1/00

Abstract:
A protective circuit includes a first field-effect transistor having a first drain terminal, a first source terminal and a first gate terminal, a control device by which an electrical first voltage between the first drain terminal and the first source terminal can be determined, and a first temperature sensor by which a first temperature of the first field-effect transistor can be detected, wherein a first resistance of the first field effect transistor and an electrical first current conducted via the first field-effect transistor can be determined by the control device based on the first temperature.
Public/Granted literature
- US20200287371A1 PROTECTIVE CIRCUIT FOR A FIELD-EFFECT TRANSISTOR Public/Granted day:2020-09-10
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