According to one embodiment, a nonvolatile memory device includes a memory cell array, first and second storage units, and control unit. The memory cell array includes erase unit areas. The first storage units correspond respectively to the erase unit areas and store items of first information indicating whether a first usage restriction is to be imposed on the corresponding erase unit areas. The second storage units correspond respectively to the erase unit areas and store items of second information indicating whether a second usage restriction is to be imposed on the corresponding erase unit areas. The control unit executes switching control on whether the first usage restriction is to be imposed or not and whether the second usage restriction is to be imposed or not on the memory cell array based on the first and second information.