A method of operating a memory device is disclosed. A method may include generating a first control signal to activate a first number of main input/output (MIO) lines associated with a first data terminal region of a memory bank at a first time. The method may also include generating a second control signal to activate a second number of MIO lines associated with a second data terminal region of the memory bank at a second, subsequent time. Further, the method may include resetting each of the first control signal and the second control signal in response to a command.