A method for operating a memory includes: activating a first row, and sensing and amplifying, by a first bit line sense amplifier array, data of memory cells of the first row; transferring data of first columns of the first row from the first bit line sense amplifier array to global input/output lines through first input/output sense amplifiers; storing data of the global input/output lines in the first columns of a dummy bit line sense amplifier array through dummy write drivers; transferring data of second columns of the first row from the first bit line sense amplifier array to the global input/output lines through the first input/output sense amplifiers; and storing the data of the global input/output lines in the second columns of the dummy bit line sense amplifier array through the dummy write drivers.