Invention Grant
- Patent Title: Physical vapor deposition apparatus and method thereof
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Application No.: US16572186Application Date: 2019-09-16
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Publication No.: US11462394B2Publication Date: 2022-10-04
- Inventor: Chia-Hsi Wang , Kun-Che Ho , Yen-Yu Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34 ; C23C14/35 ; H01L21/02

Abstract:
A PVD method includes tilting a first magnetic element over a back side of a target. The first magnetic element is moved about an axis that extends through the target. Then, charged ions are attracted to bombard the target, such that particles are ejected from the target and are deposited over a surface of a wafer. By tilting the magnetic element relative to the target, the distribution of the magnetic fields can be more random and uniform.
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