Invention Grant
- Patent Title: Semiconductor module and semiconductor-module deterioration detecting method
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Application No.: US17386822Application Date: 2021-07-28
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Publication No.: US11462445B2Publication Date: 2022-10-04
- Inventor: Eiji Kurosawa
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: JPJP2020-140940 20200824
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H03K17/081 ; G01R31/28 ; H03K19/20

Abstract:
A semiconductor module including a semiconductor element which is bonded to a wiring pattern part and connects or disconnects two main electrode terminals to or from each other according to a drive signal applied to a gate electrode terminal, includes a deterioration detecting circuit configured to use one main electrode terminal of the two main electrode terminals of the semiconductor element with an applied DC voltage, as a reference potential, and detect deterioration of a joining part of the semiconductor element on the basis of a gate voltage which is the voltage between the one main electrode terminal and the gate electrode terminal and an inter-main-electrode voltage which is the voltage between the one main electrode terminal and the other main electrode terminal, and outputs an alarm signal.
Public/Granted literature
- US20220059419A1 SEMICONDUCTOR MODULE AND SEMICONDUCTOR-MODULE DETERIORATION DETECTING METHOD Public/Granted day:2022-02-24
Information query
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