Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17417854Application Date: 2018-12-26
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Publication No.: US11462449B2Publication Date: 2022-10-04
- Inventor: Hiroshi Sato , Yoshinori Murakami , Hidekazu Tanisawa , Shinji Sato , Fumiki Kato , Kazuhiro Mitamura , Yui Takahashi
- Applicant: NISSAN MOTOR CO., LTD.
- Applicant Address: JP Yokohama
- Assignee: NISSAN MOTOR CO., LTD.
- Current Assignee: NISSAN MOTOR CO., LTD.
- Current Assignee Address: JP Yokohama
- Agency: Foley & Lardner LLP
- International Application: PCT/JP2018/047844 WO 20181226
- International Announcement: WO2020/136759 WO 20200702
- Main IPC: H01L23/29
- IPC: H01L23/29 ; H01L23/31 ; H01L33/48 ; H01L33/50 ; H01L33/62 ; H01L23/00 ; H01L33/52
Abstract:
A semiconductor device includes a semiconductor chip provided inside with a p-n junction, an opaque sealing resin covering a surface of the semiconductor chip, and a functional region arranged between the semiconductor chip and the sealing resin and configured to prevent light, which is generated when a forward current flows through the p-n junction and has a particular wavelength causing deterioration of the sealing resin, from reaching the sealing resin.
Information query
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