Invention Grant
- Patent Title: Semiconductor device package having galvanic isolation and method therefor
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Application No.: US17034201Application Date: 2020-09-28
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Publication No.: US11462494B2Publication Date: 2022-10-04
- Inventor: Burton Jesse Carpenter , Fred T. Brauchler
- Applicant: NXP USA, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L21/64
- IPC: H01L21/64 ; H01L23/64 ; H01L25/065 ; H01L23/00 ; H01L23/31 ; H01L23/367 ; H01L23/498 ; H01L21/48 ; H01L21/56 ; H01L25/00

Abstract:
A semiconductor device package having galvanic isolation is provided. The semiconductor device package includes a package substrate having a first inductive coil. A first semiconductor die is attached to a first major surface of the package substrate. The first semiconductor die includes a second inductive coil substantially aligned with the first inductive coil. A second semiconductor die is attached to the first major surface of the package substrate. A wireless communication link between the first semiconductor die and the second semiconductor die is formed by way of the first and second inductive coils.
Public/Granted literature
- US20220102292A1 SEMICONDUCTOR DEVICE PACKAGE HAVING GALVANIC ISOLATION AND METHOD THEREFOR Public/Granted day:2022-03-31
Information query
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