Invention Grant
- Patent Title: Semiconductor device with active interposer and method for fabricating the same
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Application No.: US16889218Application Date: 2020-06-01
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Publication No.: US11462519B2Publication Date: 2022-10-04
- Inventor: Ping Hsu
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L25/10 ; H01L23/498 ; H01L23/48 ; H01L25/00 ; H01L23/00

Abstract:
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes an active interposer including a programmable unit, a first memory die positioned above the active interposer and including a storage unit, and a first logic die positioned below the active interposer. The active interposer, the first memory die, and the first logic die are electrically coupled.
Public/Granted literature
- US20210375837A1 SEMICONDUCTOR DEVICE WITH ACTIVE INTERPOSER AND METHOD FOR FABRICATING THE SAME Public/Granted day:2021-12-02
Information query
IPC分类: