Invention Grant
- Patent Title: Lateral bipolar junction transistor device and method of making such a device
-
Application No.: US17130121Application Date: 2020-12-22
-
Publication No.: US11462632B2Publication Date: 2022-10-04
- Inventor: Arkadiusz Malinowski , Alexander M. Derrickson , Ali Razavieh , Halting Wang
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Hoffman Warnick LLC
- Agent Francois Pagette
- Main IPC: H01L29/735
- IPC: H01L29/735 ; H01L29/08 ; H01L29/66 ; H01L29/10
Abstract:
A non-uniform base width bipolar junction transistor (BJT) device includes: a semiconductor substrate, the semiconductor substrate having an upper surface; and a BJT device, the BJT device comprising a collector region, a base region, and an emitter region positioned in the semiconductor substrate, the base region being positioned between the collector region and the emitter region; the base region comprising a top surface and a bottom surface, wherein a first width of the top surface of the base region in a base width direction of the BJT device is greater than a second width of the bottom surface of the base region in the base width direction of the BJT device.
Public/Granted literature
- US20220199810A1 LATERAL BIPOLAR JUNCTION TRANSISTOR DEVICE AND METHOD OF MAKING SUCH A DEVICE Public/Granted day:2022-06-23
Information query
IPC分类:
