发明授权
- 专利标题： Switch device, storage apparatus, and memory system incorporating boron and carbon
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申请号： US16975630申请日： 2019-01-31
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公开(公告)号： US11462685B2公开(公告)日： 2022-10-04
- 发明人: Hiroaki Sei , Kazuhiro Ohba , Shuichiro Yasuda
- 申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- 申请人地址： JP Kanagawa
- 专利权人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- 当前专利权人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- 当前专利权人地址： JP Kanagawa
- 代理机构： Sheridan Ross P.C.
- 优先权： JPJP2018-037817 20180302
- 国际申请： PCT/JP2019/003426 WO 20190131
- 国际公布： WO2019/167538 WO 20190906
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; G11C13/00 ; H01L27/22 ; H01L27/24
摘要：
A switch device according to an embodiment of the present disclosure includes a first electrode; a second electrode opposed to the first electrode; and a switch layer including selenium (Se), at least one kind of germanium (Ge) or silicon (Si), boron (B), carbon (C), (Ga), and arsenic (As), and provided between the first electrode and the second electrode.
信息查询
IPC分类:
