- 专利标题: Method for manufacturing a multilayer radiation window and a multilayer radiation window
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申请号: US17053386申请日: 2018-05-08
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公开(公告)号: US11469086B2公开(公告)日: 2022-10-11
- 发明人: Jari Kostamo , Heikki Sipilä
- 申请人: AMETEK Finland Oy
- 申请人地址: FI Espoo
- 专利权人: AMETEK Finland Oy
- 当前专利权人: AMETEK Finland Oy
- 当前专利权人地址: FI Espoo
- 代理机构: Merchant & Gould P.C.
- 国际申请: PCT/FI2018/050344 WO 20180508
- 国际公布: WO2019/215379 WO 20191114
- 主分类号: H01J47/00
- IPC分类号: H01J47/00 ; H01J5/18 ; H01J35/18
摘要:
A method is for manufacturing a multilayer radiation window for an X-ray measurement apparatus. The method includes: producing a gas diffusion stop layer made of silicon nitride on a polished surface of a carrier; producing at least one combined layer on an opposite side of the gas diffusion stop layer than the carrier; attaching the combined structure including the carrier, the gas diffusion stop layer, the at least one combined layer to a region around an opening in a support structure with the at least one combined layer facing the support structure; and etching away the carrier. The at least one combined layer includes: a light attenuation layer made of aluminium, and a strengthening layer. A radiation window is manufactured with the method.
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