Invention Grant
- Patent Title: Photomask for negative-tone development
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Application No.: US16564779Application Date: 2019-09-09
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Publication No.: US11474426B2Publication Date: 2022-10-18
- Inventor: Soon Mok Ha , Jae-hee Kim , Yong-wook Lee , Yong-woo Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2018-0111025 20180917
- Main IPC: G03F1/42
- IPC: G03F1/42 ; G03F1/38 ; H01L21/027 ; G03F7/038

Abstract:
A photomask for negative-tone development (NTD) includes a main region, and a scribe lane region surrounding the main region and including a first lane and a second lane. The first and the second lane is provided at first opposite sides of each other with respect to the main region. The first lane includes a first sub-lane extending in a first direction and a second sub-lane that extending in the first direction. The first sub-lane includes a first dummy pattern and the second sub-lane includes a second dummy pattern. The first dummy pattern and the second dummy pattern are configured to radiate light exceeding a threshold dose of light to a first portion of a negative-tone photoresist provided under the first lane of the photomask.
Public/Granted literature
- US20200089100A1 PHOTOMASK FOR NEGATIVE-TONE DEVELOPMENT Public/Granted day:2020-03-19
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