Invention Grant
- Patent Title: Non-volatile memory including selective error correction
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Application No.: US17139526Application Date: 2020-12-31
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Publication No.: US11474722B2Publication Date: 2022-10-18
- Inventor: Carla L. Christensen
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F11/10 ; G11C29/04

Abstract:
Some embodiments include apparatuses and methods using a first memory area and a second memory area included a memory device, and using control circuitry included in the memory device to communicate with a memory controller. The memory controller includes an error correction engine. The control circuitry of the memory device is configured to retrieve the first information from the first memory area and store in the first information after the error correction engine performs an error detection operation on the first information. The control circuitry is configured to retrieve second information from the first memory area and store the second information in the second memory area without an additional error detection operation performed on the second information if a result from the error detection operation performed by the error correction engine on the first information meets a threshold condition.
Public/Granted literature
- US20210124491A1 NON-VOLATILE MEMORY INCLUDING SELECTIVE ERROR CORRECTION Public/Granted day:2021-04-29
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