Invention Grant
- Patent Title: Wafer with localized semiconductor on insulator regions with cavity structures
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Application No.: US17003179Application Date: 2020-08-26
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Publication No.: US11488980B2Publication Date: 2022-11-01
- Inventor: Siva P. Adusumilli , Anthony K. Stamper , Bruce W. Porth , John J. Ellis-Monaghan
- Applicant: GLOBALFOUNDRIES U.S. INC.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Calderon Safran & Cole, P.C.
- Agent Anthony Canale; Andrew M. Calderon
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/762 ; H01L29/06
Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to a wafer with localized cavity structures and methods of manufacture. A structure includes a bulk substrate with localized semiconductor on insulator (SOI) regions and bulk device regions, the localized SOI regions includes multiple cavity structures and substrate material of the bulk substrate.
Public/Granted literature
- US20220068975A1 WAFER WITH LOCALIZED SEMICONDUCTOR ON INSULATOR REGIONS WITH CAVITY STRUCTURES Public/Granted day:2022-03-03
Information query
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