Invention Grant
- Patent Title: Light-emitting device, light-emitting apparatus, electronic device, and lighting device
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Application No.: US16897709Application Date: 2020-06-10
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Publication No.: US11489133B2Publication Date: 2022-11-01
- Inventor: Satoshi Seo , Hiromi Seo , Kunihiko Suzuki , Kanta Abe , Yuji Iwaki , Naoaki Hashimoto , Tsunenori Suzuki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Husch Blackwell LLP
- Priority: JPJP2019-110831 20190614
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L51/00 ; H01L51/52 ; H01L27/32

Abstract:
A novel light-emitting device is provided. A light-emitting device with high emission efficiency is provided. A light-emitting device with along lifetime is provided. A light-emitting device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-injection layer, a light-emitting layer, and an electron-transport layer. The hole-injection layer is positioned between the anode and the light-emitting layer. The electron-transport layer is positioned between the light-emitting layer and the cathode. The hole-injection layer contains a first substance and a second substance. The first substance is an organic compound which has a hole-transport property and a HOMO level higher than or equal to −5.7 eV and lower than or equal to −5.4 eV. The second substance exhibits an electron-accepting property with respect to the first substance. The electron-transport layer contains a material whose resistance decreases with current flowing therethrough.
Information query
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