Invention Grant
- Patent Title: Substrate integrated thin film capacitors using amorphous high-k dielectrics
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Application No.: US16024702Application Date: 2018-06-29
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Publication No.: US11495552B2Publication Date: 2022-11-08
- Inventor: Aleksandar Aleksov , Thomas Sounart , Kristof Darmawikarta , Henning Braunisch , Prithwish Chatterjee , Andrew J. Brown
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- Main IPC: H01L23/64
- IPC: H01L23/64 ; H01L23/498 ; H01L21/48 ; H01L23/00
Abstract:
Embodiments include an electronic package that includes a dielectric layer and a capacitor on the dielectric layer. In an embodiment, the capacitor comprises a first electrode disposed over the dielectric layer and a capacitor dielectric layer over the first electrode. In an embodiment, the capacitor dielectric layer is an amorphous dielectric layer. In an embodiment, the electronic package may also comprise a second electrode over the capacitor dielectric layer.
Public/Granted literature
- US20200006258A1 SUBSTRATE INTEGRATED THIN FILM CAPACITORS USING AMORPHOUS HIGH-K DIELECTRICS Public/Granted day:2020-01-02
Information query
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