According to one or more embodiments, a non-volatile semiconductor memory device includes a semiconductor region, a gate electrode, a charge storage layer, a first insulating layer, a second insulating layers, and a conductive layer. The conductive layer contains titanium (Ti), aluminum (Al) and nitrogen (N) and has a structure in which a plurality of first layers and a plurality of second layers are alternately provided in a thickness direction. Each first layer contains titanium and nitrogen. Each second layer contains aluminum and nitrogen. In the conductive layer, the ratio of aluminum atomic composition to the sum of the titanium atomic composition and the aluminum atomic composition is equal to or less than 50%.