- 专利标题: Cureable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane
-
申请号: US16731728申请日: 2019-12-31
-
公开(公告)号: US11499014B2公开(公告)日: 2022-11-15
- 发明人: Yumin Liu , Jean-Marc Girard , Peng Zhang , Fan Qin , Gennadiy Itov , Fabrizio Marchegiani , Thomas J. Larrabee
- 申请人: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
- 申请人地址: FR Paris; US CA Fremont
- 专利权人: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude,American Air Liquide, Inc.
- 当前专利权人: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude,American Air Liquide, Inc.
- 当前专利权人地址: FR Paris; US CA Fremont
- 代理商 Yan Jiang
- 主分类号: C08G77/12
- IPC分类号: C08G77/12 ; B05D1/00 ; B05D3/02 ; C08G77/26 ; C08G77/08
摘要:
Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH2— moieties, either as terminal groups (—SiH3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1-C6 linear, branched, or cyclic alkyl- group, a C1-C6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.
公开/授权文献
信息查询