Invention Grant
- Patent Title: Methods and precursors for selective deposition of metal films
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Application No.: US16753534Application Date: 2018-10-05
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Publication No.: US11515151B2Publication Date: 2022-11-29
- Inventor: Kurt Fredrickson , Atashi Basu , Mihaela Balseanu , Ning Li
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- International Application: PCT/US2018/054736 WO 20181005
- International Announcement: WO2019/071215 WO 20190411
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/02 ; C23C16/34 ; C23C16/40
Abstract:
Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.
Public/Granted literature
- US20200312653A1 Methods And Precursors For Selective Deposition Of Metal Films Public/Granted day:2020-10-01
Information query
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