Invention Grant
- Patent Title: Transistors including heterogeneous channels
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Application No.: US16596448Application Date: 2019-10-08
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Publication No.: US11515417B2Publication Date: 2022-11-29
- Inventor: Scott E. Sills , Ramanathan Gandhi , Durai Vishak Nirmal Ramaswamy , Yi Fang Lee , Kamal M. Karda
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/66 ; H01L27/24
Abstract:
A transistor comprises a first conductive contact, a heterogeneous channel comprising at least one oxide semiconductor material over the first conductive contact, a second conductive contact over the heterogeneous channel, and a gate electrode laterally neighboring the heterogeneous channel. A device, a method of forming a device, a memory device, and an electronic system are also described.
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