- 专利标题： Semiconductor devices and methods of manufacturing thereof
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申请号： US17007555申请日： 2020-08-31
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公开(公告)号： US11527445B2公开(公告)日： 2022-12-13
- 发明人: Shu-Uei Jang , Shu-Yuan Ku , Shih-Yao Lin
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsinchu
- 代理机构： Foley & Lardner LLP
- 主分类号： H01L29/161
- IPC分类号： H01L29/161 ; H01L29/165 ; H01L21/8234 ; H01L27/088 ; H01L27/092
摘要：
A semiconductor device includes a first transistor, a second transistor, a third transistor, and a fourth transistor. The first and second transistors operate under a lower gate voltage than the third and fourth transistors. The first transistor has a first active gate structure and the second transistor has a second active gate structure. The first and second active gate structures are separated by a first gate isolation structure along a first direction. The third transistor has a third active gate structure and the fourth transistor has a fourth active gate structure. The third and fourth active gate structures are separated by a second gate isolation structure along the first direction. The variation of a first distance between respective sidewalls of the first gate isolation structure is equal to the variation of a second distance between respective sidewalls of the second gate isolation structure along the first direction.
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