Invention Grant
- Patent Title: Wiring structure and method for manufacturing the same
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Application No.: US17006688Application Date: 2020-08-28
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Publication No.: US11532542B2Publication Date: 2022-12-20
- Inventor: Wen-Long Lu
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/00 ; H01L21/48 ; H01L23/48

Abstract:
A wiring structure and a method for manufacturing the same are provided. The wiring structure includes a conductive structure and a plurality of conductive through vias. The conductive structure includes a dielectric layer, a circuit layer in contact with the dielectric layer, a plurality of dam portions and an outer metal layer. The dam portions extend through the dielectric layer. The dam portion defines a through hole. The outer metal layer is disposed adjacent to a top surface of the dielectric layer and extends into the through hole of the dam portion. The conductive through vias are disposed in the through holes of the dam portions and electrically connecting the circuit layer.
Public/Granted literature
- US20220068781A1 WIRING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2022-03-03
Information query
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