Systems, methods and apparatus are provided for depositing alternating layers of dielectric material and sacrificial material in repeating iterations to form a vertical stack, forming a plurality of vertical openings through the vertical stack to form elongated vertical, pillar columns with sidewalls in the vertical stack, patterning the pillar columns to expose a location to form a channel region, selectively removing a portion of the sacrificial material to form first horizontal openings in the first horizontal direction in the sidewalls of the elongated vertical, pillar columns, and depositing a channel material in the first horizontal openings to form the channel region within the sidewalls for the horizontally oriented access devices.