Invention Grant
- Patent Title: Storage device inferring read levels based on artificial neural network model and learning method of artificial neural network model
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Application No.: US16448636Application Date: 2019-06-21
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Publication No.: US11537842B2Publication Date: 2022-12-27
- Inventor: Hyunkyo Oh , Youngdeok Seo , Jinbaek Song , Sanghyun Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2018-0139727 20181114
- Main IPC: G06N3/04
- IPC: G06N3/04 ; G06N5/04 ; G11C16/26 ; G11C16/04

Abstract:
A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory that stores a plurality of on-cell counts, which are generated by reading memory cells connected to a plurality of reference word lines of the plurality of blocks by using a read level, and an artificial neural network model, and a controller that inputs an on-cell count corresponding to a target block among the plurality of on-cell counts and a number of a target word line of the target block to the artificial neural network model, and infers a plurality of read levels for reading data of memory cells connected to the target word line using the artificial neural network model.
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