- 专利标题: Crossbar array with reduced disturbance
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申请号: US15999140申请日: 2018-08-17
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公开(公告)号: US11538523B2公开(公告)日: 2022-12-27
- 发明人: Ning Ge
- 申请人: TETRAMEM INC.
- 申请人地址: US CA Newark
- 专利权人: TETRAMEM INC.
- 当前专利权人: TETRAMEM INC.
- 当前专利权人地址: US CA Newark
- 代理机构: Jaffery Watson Mendonsa & Hamilton LLP
- 主分类号: G11C11/15
- IPC分类号: G11C11/15 ; G11C13/00 ; G11C16/34
摘要:
Crossbar arrays with reduced disturbance and methods for programming the same are disclosed. In some implementations, an apparatus comprises: a plurality of rows; a plurality of first columns; a plurality of second columns; a plurality of devices. Each of the plurality of devices is connected among one of the plurality of rows, one of the plurality of first columns, and one of the plurality of second columns. The device further comprises a shared end on the plurality of first columns or the plurality of the second columns connecting to the plurality of the devices in the same row or column; the shared end is grounding or holds a stable voltage potential. In some implementations, one of the devices is: a RRAM, a floating date, a phase change device, an SRAM, a memristor, or a device with tunable resistance. In some implementations the stable voltage potential is a constant DC voltage.
公开/授权文献
- US20200058352A1 Crossbar array with reduced disturbance 公开/授权日:2020-02-20
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